DocumentCode
3417890
Title
Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes
Author
Rahimo, M. ; Kopta, A. ; Eicher, S. ; Schlapbach, U. ; Linder, S.
Author_Institution
ABB Switzerland Ltd., Lenzburg, Switzerland
fYear
2004
fDate
24-27 May 2004
Firstpage
437
Lastpage
440
Abstract
In this paper, we present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date. We demonstrate for the first time, low loss IGBT and diode chip-sets with voltage ratings ranging from 3.3 kV to 6.5 kV, capable of withstanding both dynamic avalanche and what we refer to as the switching-self-clamping-mode; hence, resulting in a clear breakthrough in SOA capability for high voltage devices.
Keywords
insulated gate bipolar transistors; power bipolar transistors; power semiconductor diodes; semiconductor device breakdown; 3.3 to 6.5 kV; SOA limits; SSCM; dynamic avalanche; high voltage IGBT; high voltage diodes; low loss IGBT; safe operating area capability; switching-self-clamping-mode; voltage ratings; Insulated gate bipolar transistors; Power bipolar transistors; Power semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN
4-88686-060-5
Type
conf
DOI
10.1109/ISPSD.2004.1332970
Filename
1332970
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