• DocumentCode
    3417945
  • Title

    Development of current-scalable emitter turn-off (ETO) thyristor module

  • Author

    Schmit, A. ; Chen, B. ; Zhang, B. ; Huang, A.Q.

  • Author_Institution
    Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • Volume
    3
  • fYear
    2005
  • fDate
    6-10 March 2005
  • Firstpage
    2009
  • Abstract
    This paper highlights the development and experimental demonstration of an ETO module based on planar GTO technology that is well-suited to be scaled for a multitude of current requirements, with continuous current ratings from 100 A, and voltages up to 6.5 kV. Different from the previous press-pack ETO design, the new design employs an industry standard module design widely used in IGBT power devices.
  • Keywords
    insulated gate bipolar transistors; power bipolar transistors; thyristors; 100 A; ETO module; IGBT power devices; current-scalable emitter; turn-off thyristor module; Cathodes; Diodes; Insulated gate bipolar transistors; Negative feedback; Power electronics; Power engineering and energy; Power engineering computing; Semiconductor devices; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
  • Print_ISBN
    0-7803-8975-1
  • Type

    conf

  • DOI
    10.1109/APEC.2005.1453334
  • Filename
    1453334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3417945