Title :
550 V superjunction 3.9 Ωmm2 transistor formed by 25 MeV masked boron implantation
Author :
Rub, M. ; Bar, M. ; Deboy, Gerald ; Schmitt, Marius ; Schulze, H.-J. ; Willmeroth, A.
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
For the first time, we present experimental work on superjunction devices, in which the deep p-columns have been formed by a multi-step high-energy implantation. The desired blocking voltage and the Ron × A are in the range of 500 V-600 V and about 3.5 - 4.0 Ωmm2, respectively. Deep (32 μm) p-n junctions were formed by using a set of five boron implantation energies ranging from 3 to 25 MeV. Masking was achieved by silicon stencil masks which were glued to the device wafers.
Keywords :
boron; ion implantation; masks; p-n junctions; power MOSFET; semiconductor doping; 32 micron; 500 to 600 V; 550 V; Si:B; blocking voltage; chemical separation; deep p-n junctions; glue deposition; implanted columns; isotropic etching; masked boron implantation; multi-step high-energy implantation; n-epitaxy; reusable silicon stencil masks; silicon ion damage implant; superjunction transistors; thermal oxidation; thermal treatment; wafers; Boron; Ion implantation; Masks; Power MOSFETs; Semiconductor device doping; p-n junctions;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332976
