Title :
A 20mΩcm2 600 V-class superjunction MOSFET
Author :
Saito, Wataru ; Omura, Ichiro ; Aida, Satoshi ; Koduki, Shigeo ; Izumisawa, Masaru ; Yoshioka, Hironori ; Ogura, Tsuneo
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki, Japan
Abstract :
Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20∼mΩcm2 among previously reported 600 V-class SJ-MOSFETs. The device also withstands a high avalanche current of 185-A/cm2.
Keywords :
avalanche breakdown; power MOSFET; semiconductor device breakdown; 600 V; 680 V; avalanche current withstanding capability; breakdown voltage; low on-resistance SJ-MOSFET; superjunction MOSFET; Avalanche breakdown; Power MOSFETs;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332977
