Title :
Temperature characteristics of a new 100V rated power MOSFET, VLMOS (vertical LOCOS MOS)
Author :
Kodama, Masahito ; Hayashi, Eiko ; Nishibe, Yuji ; Uesugi, Tsutomu
Author_Institution :
Toyota Central R&D Labs. Inc., Aichi, Japan
Abstract :
In this paper, we proposed a new 100 V rated power MOSFET, called "VLMOS (vertical LOCOS MOSFET)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.
Keywords :
high-temperature electronics; oxidation; power MOSFET; 100 V; MOSFET temperature characteristics; VLMOS; automotive electronics; high temperature operation; specific on-resistance; vertical LOCOS MOSFET; wide-temperature range operations; Oxidation; Power MOSFETs;
Conference_Titel :
Power Semiconductor Devices and ICs, 2004. Proceedings. ISPSD '04. The 16th International Symposium on
Print_ISBN :
4-88686-060-5
DOI :
10.1109/ISPSD.2004.1332978
