DocumentCode :
3418087
Title :
Performance evaluation of a 32-nm CNT-OPAMP in analog circuits: Design and comparison of Elliptical filters
Author :
Rahman, Farin ; Ilyas, I. ; Fatema, Nasrin ; Shama, R.T.
Author_Institution :
Dept. of EEE, Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, we have presented the design and characteristic performance evaluation of an Elliptical filter for 800 Hertz bandwidth. First we designed the filter by using Silicon-based CMOS Operational Amplifiers (Si-OPAMPs). Then we designed the filter with Carbon Nanotube-based Operational Amplifiers (CNT-OPAMPs) using a benchmark nine-transistor Operational Amplifier (OPAMP) model with single-walled Carbon Nanotube Field-Effect Transistors (SW-CNTFETs) as primary building-blocks for 32nm technology. We compared the performance between the two and achieved higher phase margin, improved power dissipation, and significantly low output resistance for the CNT-OPAMP based filter. Then we further evaluated the performance of the CNT-OPAMP based filter by changing the number of SWNTs used for making each of the CNTFET, keeping all other design parameters the same. Our simulation-based assessment has shown a satisfactory superiority for CNT-OPAMP filter design in comparison with Si-based CMOS filter design. The results obtained suggest that the CNT-OPAMP has a promising potential for low-power, highspeed applications in both analog and mixed-signal nanoelectronic circuits.
Keywords :
CMOS analogue integrated circuits; carbon nanotube field effect transistors; electric resistance; elliptic filters; operational amplifiers; CNT-OPAMP filter design; OPAMP model; SW-CNTFET; Si-OPAMP; analog circuit; bandwidth 800 Hz; carbon nanotube-based operational amplifier; characteristic performance evaluation; design parameter; design performance evaluation; elliptical filter; nine-transistor operational amplifier; output resistance; phase margin; power dissipation; silicon-based CMOS operational amplifier; simulation-based assessment; single-walled carbon nanotube field-effect transistor; size 32 nm; Benchmark testing; CNTFETs; Carbon nanotubes; Electron tubes; Performance evaluation; Power dissipation; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467737
Filename :
6467737
Link To Document :
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