Title :
Rapid thermal processing for reproducible formation of the self-aligned silicides of cobalt and platinum
Author :
Murarka, Shyam P.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
30 Sep-1 Oct 1992
Abstract :
The results of a continued investigation of the formation of self-aligned CoSi2 and PtSi are presented. In both cases it is found that simple surface cleaning methods and use of rapid thermal annealing in inert ambients lead to a method of forming these silicides that is reproducible and reliable. The effect of dopants in silicon or polysilicon on such process has also been investigated. These results are described and compared with the available information on the TiSi 2 process
Keywords :
annealing; cobalt compounds; metallisation; platinum compounds; rapid thermal processing; semiconductor technology; surface treatment; CoSi2; PtSi; RTA; RTP; dopants; inert ambients; polysilicon; rapid thermal annealing; reproducible formation; self-aligned silicides; surface cleaning; Annealing; Cobalt; Conductivity; Etching; Gettering; Rapid thermal processing; Silicides; Silicon; Stability; Temperature;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0740-2
DOI :
10.1109/ASMC.1992.253790
