• DocumentCode
    3418176
  • Title

    Single electron tunneling technology for neural networks

  • Author

    Goossens, Martijn J. ; Verhoeven, Chris J M ; Van Roermund, Arthur H M

  • Author_Institution
    Electron. Res. Lab., Delft Univ. of Technol., Netherlands
  • fYear
    1996
  • fDate
    12-14 Feb 1996
  • Firstpage
    125
  • Lastpage
    130
  • Abstract
    A new neural network hardware concept based on single electron tunneling is presented. Single electron tunneling transistors have some advantageous properties which make them very attractive to make neural networks, among which their very small size, extremely low power consumption and potentially high speed. After a brief description of the technology, the relevant properties of SET transistors are described. Simulations have been performed on some small circuits of SET transistors that exhibit functional properties similar to those required for neural networks. Finally, interconnecting the building blocks to form a neural network is analyzed
  • Keywords
    neural nets; single electron transistors; SET transistors; high speed operation; low power consumption; neural networks; single electron tunneling technology; Capacitors; Electronic mail; Electrons; Kelvin; Microelectronics; Neural network hardware; Neural networks; Temperature; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics for Neural Networks, 1996., Proceedings of Fifth International Conference on
  • Conference_Location
    Lausanne
  • ISSN
    1086-1947
  • Print_ISBN
    0-8186-7373-7
  • Type

    conf

  • DOI
    10.1109/MNNFS.1996.493782
  • Filename
    493782