DocumentCode
3418176
Title
Single electron tunneling technology for neural networks
Author
Goossens, Martijn J. ; Verhoeven, Chris J M ; Van Roermund, Arthur H M
Author_Institution
Electron. Res. Lab., Delft Univ. of Technol., Netherlands
fYear
1996
fDate
12-14 Feb 1996
Firstpage
125
Lastpage
130
Abstract
A new neural network hardware concept based on single electron tunneling is presented. Single electron tunneling transistors have some advantageous properties which make them very attractive to make neural networks, among which their very small size, extremely low power consumption and potentially high speed. After a brief description of the technology, the relevant properties of SET transistors are described. Simulations have been performed on some small circuits of SET transistors that exhibit functional properties similar to those required for neural networks. Finally, interconnecting the building blocks to form a neural network is analyzed
Keywords
neural nets; single electron transistors; SET transistors; high speed operation; low power consumption; neural networks; single electron tunneling technology; Capacitors; Electronic mail; Electrons; Kelvin; Microelectronics; Neural network hardware; Neural networks; Temperature; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics for Neural Networks, 1996., Proceedings of Fifth International Conference on
Conference_Location
Lausanne
ISSN
1086-1947
Print_ISBN
0-8186-7373-7
Type
conf
DOI
10.1109/MNNFS.1996.493782
Filename
493782
Link To Document