DocumentCode
3418235
Title
SOI digital circuits: design issues
Author
Puri, Ruchir ; Chuang, C.T.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2000
fDate
2000
Firstpage
474
Lastpage
479
Abstract
This paper reviews the recent advances in SOI digital CMOS circuits. Particular emphases is placed on the impact of floating-body in partially-depleted devices on the circuit operation, stability, and functionality. Unique SOI design aspects such as parasitic bipolar effect and hysteretic VT variation are addressed. Circuit techniques to improve the noise immunity and global design issues are also addressed
Keywords
CMOS digital integrated circuits; circuit stability; integrated circuit design; integrated circuit noise; silicon-on-insulator; SOI digital circuits; circuit operation; digital CMOS circuits; floating-body; functionality; global design issues; hysteretic VT variation; noise immunity; parasitic bipolar effect; partially-depleted devices; stability; CMOS digital integrated circuits; CMOS technology; Circuit noise; Circuit stability; Digital circuits; Hysteresis; Immune system; Microprocessors; Scalability; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location
Calcutta
ISSN
1063-9667
Print_ISBN
0-7695-0487-6
Type
conf
DOI
10.1109/ICVD.2000.812652
Filename
812652
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