DocumentCode
3418248
Title
Rapid development, in a manufacturing environment, of a 1 μm triple-level metal CMOS process through the use of cross-functional teams
Author
Comard, Matthew ; Cuéllar, Jesús
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
fYear
1992
fDate
30 Sep-1 Oct 1992
Firstpage
180
Lastpage
185
Abstract
The development, in a manufacturing environment, of a 1 μm triple-level-metal, 5 V CMOS process in under 25 weeks is discussed. The manufacturing process engineering group developed cross-functional process integration teams that synthesized device engineering from R&D, manufacturing process engineering, production, yield engineering, product engineering, and reliability engineering. By developing the process completely within the manufacturing group and allocating key R&D expertise for device design only, these teams enabled the entire organization to come up the learning curve together, minimizing redundancy that leads to inefficient process development. Teamwork among R&D, process engineering, and production resulted in a relatively low cost, high-yield process
Keywords
CMOS integrated circuits; integrated circuit manufacture; management; 1 micron; 5 V; CMOS process; cross-functional teams; high-yield process; low cost process; manufacturing environment; production; teamwork; triple-level metal; CMOS process; Electronic switching systems; Job shop scheduling; Manufacturing processes; Marine vehicles; Production; Research and development; Semiconductor device manufacture; Teamwork; Time to market;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-0740-2
Type
conf
DOI
10.1109/ASMC.1992.253797
Filename
253797
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