• DocumentCode
    3418248
  • Title

    Rapid development, in a manufacturing environment, of a 1 μm triple-level metal CMOS process through the use of cross-functional teams

  • Author

    Comard, Matthew ; Cuéllar, Jesús

  • Author_Institution
    Digital Equipment Corp., Hudson, MA, USA
  • fYear
    1992
  • fDate
    30 Sep-1 Oct 1992
  • Firstpage
    180
  • Lastpage
    185
  • Abstract
    The development, in a manufacturing environment, of a 1 μm triple-level-metal, 5 V CMOS process in under 25 weeks is discussed. The manufacturing process engineering group developed cross-functional process integration teams that synthesized device engineering from R&D, manufacturing process engineering, production, yield engineering, product engineering, and reliability engineering. By developing the process completely within the manufacturing group and allocating key R&D expertise for device design only, these teams enabled the entire organization to come up the learning curve together, minimizing redundancy that leads to inefficient process development. Teamwork among R&D, process engineering, and production resulted in a relatively low cost, high-yield process
  • Keywords
    CMOS integrated circuits; integrated circuit manufacture; management; 1 micron; 5 V; CMOS process; cross-functional teams; high-yield process; low cost process; manufacturing environment; production; teamwork; triple-level metal; CMOS process; Electronic switching systems; Job shop scheduling; Manufacturing processes; Marine vehicles; Production; Research and development; Semiconductor device manufacture; Teamwork; Time to market;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 1992. ASMC 92 Proceedings. IEEE/SEMI 1992
  • Conference_Location
    Cambridge, MA
  • Print_ISBN
    0-7803-0740-2
  • Type

    conf

  • DOI
    10.1109/ASMC.1992.253797
  • Filename
    253797