Title :
A 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer
Author :
Maheshwari, Sanjeev Kumar ; Visweswaran, G.S.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India
Abstract :
Design of a 3.3 V compatible 2.5 V TTL-to-CMOS bidirectional I/O buffer is proposed. Gate oxide protection was implemented without active voltage degradation, which reduces static and dynamic current levels and improves noise immunity for the low voltage circuit of this kind. Fast removal of stored charge further improves gate oxide protection and circuit recovery from overvoltage condition. A circuit was designed and simulated in 0.25 μm technology
Keywords :
VLSI; buffer circuits; integrated circuit design; integrated circuit noise; low-power electronics; mixed analogue-digital integrated circuits; overvoltage protection; 0.25 micron; 2.5 V; 3.3 V; TTL-to-CMOS bidirectional I/O buffer; VLSI; active voltage degradation; circuit recovery; dynamic current levels; gate oxide protection; low voltage circuit; noise immunity; overvoltage condition; static current levels; Atherosclerosis; Circuit simulation; Degradation; Energy consumption; Low voltage; MOSFETs; Protection; System buses; Threshold voltage; Voltage control;
Conference_Titel :
VLSI Design, 2000. Thirteenth International Conference on
Conference_Location :
Calcutta
Print_ISBN :
0-7695-0487-6
DOI :
10.1109/ICVD.2000.812654
