Title :
A novel rectifier with low turn-on voltage utilizing three conducting mechanisms at different voltage levels
Author :
Meng Zhang ; Jin Wei ; Zehong Li ; Weizhong Chen ; Min Ren ; JinPing Zhang
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A novel rectifier with low turn-on voltage is proposed using depletion effects of both the surface Schottky junctions and the buried PN junctions to control the conducting channel, thus to rectify the current. At different forward voltage levels, this novel rectifier works in three different conducting modes. Moreover, by proper design, reverse breakdown voltage determined by avalanche in PN junction and reverse recovery characteristics analogous to Schottky barrier diode can be realized.
Keywords :
Schottky diodes; power semiconductor diodes; Schottky barrier diode; buried PN junctions; conducting channel control; conducting mechanisms; depletion effects; forward voltage levels; low-turn-on voltage; rectifier; reverse breakdown voltage; reverse recovery characteristics; surface Schottky junctions; Anodes; Breakdown voltage; Junctions; Rectifiers; Schottky barriers; Schottky diodes; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467748
