• DocumentCode
    3418383
  • Title

    Thin film passive components integrated into silicon based multi-chip modules for aerospace applications

  • Author

    Kim, N.P. ; Coates, K.L. ; Chien, C.-P. ; Tanielian, M.H.

  • Author_Institution
    Boeing Defence & Space Group, Seattle, WA, USA
  • fYear
    1997
  • fDate
    9-12 Mar 1997
  • Firstpage
    81
  • Lastpage
    84
  • Abstract
    Research and development activities of Boeing embedded passive technologies are described with an emphasis on resistors and capacitors. Both resistor and capacitor technologies are based on thin film processing to be compatible with the current fabrication process for silicon based multi-chip modules. Resistor material systems with two different ranges of resistivity were developed. Candidate materials included TaNx for low resistivity and various cermet materials for high resistivity materials. Three different materials systems are being evaluated for embedded capacitors. Single or multi-layer capacitors using SiNx, and Ta2O5 based thin film as dielectric are being developed while only a limited study is planned on high permittivity materials. A conceptual process flow for the multi-layering scheme was developed and is being implemented with candidate capacitor materials. This paper will describe experimental results collected along this study
  • Keywords
    aerospace instrumentation; cermets; elemental semiconductors; multichip modules; permittivity; silicon; thin film capacitors; thin film resistors; Boeing; Si; SiN; Ta2O5; aerospace applications; capacitors; cermet materials; embedded passive technologies; multi-chip modules; multi-layer capacitors; multi-layering scheme; permittivity; resistivity; resistors; thin film passive components; thin film processing; Capacitors; Ceramics; Conductivity; Dielectric materials; Dielectric thin films; Fabrication; Research and development; Resistors; Semiconductor thin films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Packaging Materials. Proceedings., 3rd International Symposium on
  • Conference_Location
    Braselton, GA
  • Print_ISBN
    0-7803-3818-9
  • Type

    conf

  • DOI
    10.1109/ISAPM.1997.581262
  • Filename
    581262