Device scaling and application trends for over 200GHz SiGe HBTs

Author

Freeman, G. ; Jae-Sung Rieh ; Jagannathan, B. ; Zhijian Yang ; Guarin, F. ; Joseph, A.

fYear

2003

fDate

11-11 April 2003

Firstpage

6

Lastpage

9

Abstract

We discuss issues and solutions for scaling of SiGe HBT devices through f/sub T/ = 350GHz. Trends in peak f/sub T/ current density J/sub CP/ and avalanche multiplication M-I are shown for devices with f/sub T/ ranging from 50GHz to 350GHz, and discussed in the context of device operation and reliability. The over 10/spl times/ current density increase observed across this f/sub T/ range may be managed by reducing emitter width and maintaining a low device thermal resistance. We show that the over 20/spl times/ avalanche current increase must be accompanied by a reduction in base resistance to maintain sufficiently high instability voltage. We also discuss the degradation from avalanche hot carriers and find this acceptable looking forward. From the circuit point of view, reversal in base current resulting from avalanche must be managed in the model and in the circuit design.

Keywords

Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; hot carriers; semiconductor device breakdown; semiconductor materials; 50 to 350 GHz; SiGe; SiGe HBT; avalanche multiplication; base resistance; current density; cutoff frequency; device scaling; hot carrier degradation; instability voltage; reliability; thermal resistance; Current density; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carriers; Maintenance; Silicon germanium; Thermal degradation; Thermal management; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196655

Filename

1196655