A manufacturable 0.35 /spl mu/m 150 GHz f/sub T/ SiGe:C bipolar RF technology

Author

Schwerd, M. ; Seck, M. ; Huttner, T. ; Bottner, T. ; Drexl, S. ; Hasler, B. ; Mitchell, A. ; Heineder, H. ; Korner, H. ; Kubrak, V. ; Schrenk, M. ; Lachner, R.

fYear

2003

fDate

11-11 April 2003

Firstpage

10

Lastpage

13

Abstract

Intensive world wide development work in high-speed bipolar RF technologies leads to a rapid increase in transistor performance. This paper describes a manufacturable leading-edge 0.35 /spl mu/m bipolar SiGe:C technology offering balanced transistor parameter sets with more than 150 GHz f/sub T/ and 180 GHz f/sub max/ as well as further integrated active and passive devices to serve a broad spectrum of applications.

Keywords

Ge-Si alloys; UHF bipolar transistors; microwave bipolar transistors; semiconductor materials; semiconductor technology; 0.35 micron; 150 GHz; 180 GHz; SiGe:C; active devices; balanced transistor parameter sets; bipolar RF technology; passive devices; transistor performance; Chemical technology; Circuit testing; Germanium silicon alloys; Lithography; Manufacturing; Metallization; Radio frequency; Resistors; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196656

Filename

1196656