DocumentCode :
3418539
Title :
Modeling avalanche multiplication for advanced high-speed SiGe bipolar transistors
Author :
Pfost, M. ; Kubrak, V. ; Romanyuk, A.
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2003
fDate :
11-11 April 2003
Firstpage :
18
Lastpage :
21
Abstract :
For correct modeling of avalanche breakdown effects in bipolar transistors with the six transistor model, the multiplication factor M must be accurately described. However, as a simplification it is sometimes suggested to neglect its current dependence. We will show that this is not possible for advanced high-speed SiGe bipolar technologies. In this work, we present a practical model for M which takes the current into account as well. It allows simple parameter extraction and, moreover, can easily be used with standard circuit simulators. The model is verified for a fast pre-production SiGe technology by comparison to measurements.
Keywords :
Ge-Si alloys; avalanche breakdown; microwave bipolar transistors; semiconductor device models; SiGe; avalanche multiplication; circuit simulators; current dependence; high-speed bipolar transistors; multiplication factor; parameter extraction; six transistor model; Avalanche breakdown; Bipolar transistors; Breakdown voltage; Circuit simulation; Germanium silicon alloys; High speed optical techniques; Laser radar; Optical fiber networks; Predictive models; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
Type :
conf
DOI :
10.1109/SMIC.2003.1196658
Filename :
1196658
Link To Document :
بازگشت