• DocumentCode
    3418576
  • Title

    Resonance phase operation of bipolar transistors

  • Author

    Jorke, H. ; Schafer, M.

  • Author_Institution
    Res. Center, DaimlerChrysler AG, Ulm, Germany
  • fYear
    2003
  • fDate
    11-11 April 2003
  • Firstpage
    26
  • Lastpage
    28
  • Abstract
    This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.
  • Keywords
    heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 2-D simulator; BLAZE; bipolar technology; bipolar transistors; coherent transistor; current amplification; ideal transistor model; microwave performance; numerical simulation; periodic resonances; resonance phase operation; transport factor; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Cutoff frequency; Numerical simulation; Radio frequency; Radiofrequency integrated circuits; Reflection; Resonance; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
  • Conference_Location
    Grainau, Germany
  • Print_ISBN
    0-7803-7787-7
  • Type

    conf

  • DOI
    10.1109/SMIC.2003.1196660
  • Filename
    1196660