Title :
Resonance phase operation of bipolar transistors
Author :
Jorke, H. ; Schafer, M.
Author_Institution :
Res. Center, DaimlerChrysler AG, Ulm, Germany
Abstract :
This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 2-D simulator; BLAZE; bipolar technology; bipolar transistors; coherent transistor; current amplification; ideal transistor model; microwave performance; numerical simulation; periodic resonances; resonance phase operation; transport factor; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Cutoff frequency; Numerical simulation; Radio frequency; Radiofrequency integrated circuits; Reflection; Resonance; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196660