DocumentCode
3418576
Title
Resonance phase operation of bipolar transistors
Author
Jorke, H. ; Schafer, M.
Author_Institution
Res. Center, DaimlerChrysler AG, Ulm, Germany
fYear
2003
fDate
11-11 April 2003
Firstpage
26
Lastpage
28
Abstract
This work deals with the amplification scheme of resonance phase operation. For simplicity, the coherent transistor is used for its explanation. It is an ideal transistor model with a transport factor given by /spl alpha/ = exp (-/spl omega//spl tau//sub EC/). The transistor shows periodic resonances In Its current amplification at frequencies f/sub n,curr/ = n//spl tau//sub EC/. Additionally, the output of the transistor is found to operate as a reflection amplifier, where the centres: of the amplification are located close to f/sub n,refl/ = (n-1/4)//spl tau//sub EC/. Prospects of implementation of the new amplification scheme in silicon based bipolar technology are shown by numerical simulation using the 2-D simulator BLAZE from Silvaco.
Keywords
heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; 2-D simulator; BLAZE; bipolar technology; bipolar transistors; coherent transistor; current amplification; ideal transistor model; microwave performance; numerical simulation; periodic resonances; resonance phase operation; transport factor; Bipolar integrated circuits; Bipolar transistor circuits; Bipolar transistors; Cutoff frequency; Numerical simulation; Radio frequency; Radiofrequency integrated circuits; Reflection; Resonance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196660
Filename
1196660
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