Title :
A simple method to accurately determine the temperature dependence of thermal resistance of InP HBTs
Author :
Jun Liu ; Wei Cheng ; Lin Zhang ; Haiyan Lu ; Chunlin Han
Author_Institution :
Key Lab. for RF Circuits & Syst. of Minist. of Educ., Hangzhou Dianzi Univ., Hangzhou, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A simple method to accurately determine the nonlinear dependence of the thermal resistance of heterojunction bipolar transistors (HBTs) on ambient and junction temperatures is presented. A nonlinear model of the thermal resistance dependence on the power dissipation is introduced for the actual junction temperature predicting. This method is demonstrated by an accurate extraction of thermal effects of a power HBT with an effective emitter area of 1×15μm2, fabricated with an in-house InP HBT technology.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; power transistors; thermal resistance; HBT; heterojunction bipolar transistors; junction temperature; nonlinear dependence; nonlinear model; power dissipation; temperature dependence; thermal effects; thermal resistance; Heterojunction bipolar transistors; Junctions; Power dissipation; Temperature dependence; Temperature measurement; Thermal resistance; Heterojunction Bipolar Transistor; extraction; model; thermal resistance;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467760
