Simulation of current density — Voltage characteristics of poly[9,9-di-(2´-ethylhexyl)fluorenyl-2,7-diyl] based light emitting diode

Author

Qiushu Zhang ; Di Li

Author_Institution

Sch. of Mechatron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, we model a pristine polyfluorene based light emitting diode by using space charge limited current theory. Polymer light emitting diode device was manufactured with the configuration of ITO/ PEDOT:PSS/polyfluorene/Al. The light emitting polymer thin film layer was poly[9,9-di-(2´-ethylhexyl) fluorenyl-2,7-diyl] (PF2/6). Poole-Frenkel expression for field dependence of the hole mobility is used. The simulation result is in good agreement with the experiment for bias voltages above 2.6 V.

Keywords

current density; light emitting diodes; polymers; thin film devices; ITO/PEDOT:PSS/polyfluorene/Al; Poole-Frenkel expression; current density-voltage characteristics; field dependence; hole mobility; light emitting polymer thin film layer; poly[9,9-di-(2´-ethylhexyl)fluorenyl-2,7-diyl]; polymer light emitting diode device; pristine polyfluorene; space charge limited current theory; Electric fields; Indium tin oxide; Light emitting diodes; Physics; Polymers; Space charge; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467761

Filename

6467761