Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications

Author

Spirito, M. ; de Vreede, L.C.N. ; Nanver, L.K. ; Mueller, J.E. ; Burghartz, J.N.

Author_Institution

Lab. of Electron. Components, Technol. & Mater., TU Delft, Netherlands

fYear

2003

fDate

11-11 April 2003

Firstpage

49

Lastpage

52

Abstract

This paper describes the design and implementation of several passive networks, which facilitate controlled 2nd-harmonic impedances at the in-and output of PA´s for mobile applications. Focus is placed on the implementation and performance of series resonators, integrated transformers and tuned center-tapped balun in conventional silicon, high resistivity silicon (HRS) and RF PCB materials.

Keywords

baluns; mobile handsets; passive networks; power amplifiers; radiofrequency amplifiers; resonators; transformers; RF PCB material; Si; high resistivity silicon; integrated transformer; low-loss passive network; mobile phone; power amplifier; second harmonic impedance termination control; series resonator; silicon; tuned center-tapped balun; Capacitance; Conductivity; Impedance matching; Inductors; Passive networks; Q factor; Radio frequency; Radiofrequency amplifiers; Silicon; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196666

Filename

1196666