Title :
Self-aligned, gated field emitter arrays with integrated high-aspect-ratio current limiters
Author :
Guerrera, Stephen A. ; Akinwande, Akintunde Ibitayo
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We report the fabrication of arrays of silicon field emitters with 1-micron pitch with integrated, self-aligned extractor gates and 10-micron tall high-aspect-ratio silicon vertical current limiters.
Keywords :
current limiters; elemental semiconductors; field emitter arrays; silicon; gated field emitter arrays; integrated high-aspect-ratio current limiters; self-aligned extractor gates; silicon vertical current limiters; Cathodes; Current limiters; Etching; Fabrication; Field emitter arrays; Logic gates; Silicon; Field Emitter Arrays; Silicon; Vertical Current Limiters; Vertical Ungated Field-Effect Transistors;
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
DOI :
10.1109/IVNC.2013.6624726
