DocumentCode :
3418742
Title :
Electrical performance in time domain of subminiature interconnections on new thin films
Author :
Salik, R. ; Ferrari, P. ; Chosson, A. ; Angnieux, G.
Author_Institution :
Silvaco Int., Santa Clara, CA, USA
fYear :
1997
fDate :
9-12 Mar 1997
Firstpage :
143
Lastpage :
146
Abstract :
This paper is focused on transmission lines with dimensions comparable to future VLSI interconnections (except for the transmission line width which is equal to 5 μm, whereas the width of future interconnections will probably be less than 1 μm). The goal is to show on which characteristic the effort must be made. To achieve this, the propagation of fast signals along the transmission lines is studied in the time domain. The effect of the insulator on electrical delay and distortion are pointed out. A Fourier transform is used to give the propagation constant γ(ω)=α(ω)+jβ(ω) of the transmission lines in the frequency domain. Results are compared to those obtained by a full wave frequency domain modeling method (TRM)
Keywords :
VLSI; delays; frequency-domain analysis; integrated circuit interconnections; integrated circuit measurement; microwave measurement; time-domain analysis; Fourier transform; SiOF organic oxide; VLSI interconnections; distortion; electrical delay; fast signal propagation; full wave frequency domain modeling method; insulator effect; propagation constant; subminiature interconnections; thin films; time domain electrical performance; transmission lines; Delay effects; Dielectrics and electrical insulation; Frequency domain analysis; Integrated circuit interconnections; Length measurement; Time measurement; Transistors; Transmission line measurements; Transmission line theory; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials. Proceedings., 3rd International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-7803-3818-9
Type :
conf
DOI :
10.1109/ISAPM.1997.581279
Filename :
581279
Link To Document :
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