24 GHz differential SiGe-MMIC oscillator with integrated mixer

Author

Gruson, F. ; Abele, P. ; Schad, K.-B. ; Sonmez, E. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

60

Lastpage

63

Abstract

In this paper we present a 24 GHz-MMIC (Monolithic Microwave Integrated Circuit) using SiGe HBTs (Hetero Bipolar Transistor) which includes a differential oscillator realized with lumped elements and integrated mixer. The oscillator uses a differential circuit topology. The measured output power into a 1000 differential load is about 2 dBm and the phase-noise is -104 dBc/Hz at 1 MHz offset frequency. The differential output of the oscillator is used for driving a single balanced mixer. The conversion gain Is around -4 dB, depending on the IF frequency. The area consumption of mixer and oscillator Including all pads is 465 /spl mu/m /spl times/ 475 /spl mu/m.

Keywords

Ge-Si alloys; MMIC mixers; MMIC oscillators; bipolar MMIC; heterojunction bipolar transistors; integrated circuit layout; semiconductor materials; 24 GHz; 465 micron; 475 micron; SiGe; SiGe HBTs; differential SiGe MMIC oscillator; differential circuit topology; integrated mixer; monolithic microwave integrated circuit; single balanced mixer; Bipolar integrated circuits; Bipolar transistors; Circuit topology; Germanium silicon alloys; MMICs; Microwave integrated circuits; Microwave oscillators; Mixers; Monolithic integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196669

Filename

1196669