A new fourth-order Gm-C CMOS polyphase filter for Low-IF receiver

Author

Shan Liu ; Bo Wang ; Jin-Peng Shen ; Xin-an Wang ; Ru Huang

Author_Institution

Shenzhen Grad. Sch., Peking Univ., Shenzhen, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A new CMOS G_m-C polyphase filter for Low-IF receiver is presented. As the linearity of the G_m-C polyphase filter is determined by the transconductor amplifier, a highly linear transconductor amplifier is designed. A novel G_m-C polyphase filter topology is proposed to reduce the die area. The center frequency of the novel 4^th order G_m-C polyphase filter is 2.5MHz with the bandwidth of 3.6MHz. Designed in 90nm standard CMOS process; the polyphase filter occupies only 0.0465mm². Consuming 1.02mA from a 2.4V voltage, the polyphase filter achieves a voltage gain of 6.85dB at the pass-band and an image rejection of 31.5dB at -2.5MHz.

Keywords

CMOS analogue integrated circuits; amplifiers; band-pass filters; bandwidth allocation; radio receivers; Gm-C polyphase filter topology; bandwidth; bandwidth 3.6 MHz; center frequency; current 1.02 mA; die area; fourth-order Gm-C CMOS polyphase filter; frequency 2.5 MHz; gain 6.85 dB; image rejection; linear transconductor amplifier; low-IF receiver; pass-band; size 90 nm; standard CMOS process; voltage 2.4 V; voltage gain; Band pass filters; Filtering theory; Low pass filters; Maximum likelihood detection; Microwave filters; Nonlinear filters; Receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467766

Filename

6467766