24 GHz high sensitivity downconverter using a commercial SiGe HBT MMIC foundry technology

Author

Sonmez, E. ; Trasser, A. ; Abele, P. ; Gruson, F. ; Schad, K.-B. ; Schumacher, H.

Author_Institution

Dept. of Electron Devices & Circuits, Ulm Univ., Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

68

Lastpage

71

Abstract

The authors have demonstrated an integrated downconverter addressing the ISM-band at 24 GHz using a standard SiGe HBT MMIC process with an effective emitter width of 0.5 /spl mu/m. Extremely compact circuit layout and transistor structure optimization are applied to a mature Si/SiGe technology, resulting in a low-cost integrated circuit enabling consumer-oriented systems at the 24 GHz ISM band. The integrated components are a preamplifier and a mixer with an IF buffer. The conversion gain is determined to be 40 dB for an intermediate frequency of 100 MHz.

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC mixers; bipolar MMIC; heterojunction bipolar transistors; preamplifiers; semiconductor materials; 0.5 micron; 100 MHz; 24 GHz; 40 dB; IF buffer; ISM-band operation; Si-SiGe; Si/SiGe technology; commercial SiGe HBT MMIC foundry technology; compact circuit layout; consumer-oriented systems; high sensitivity downconverter; low-cost integrated circuit; mixer; preamplifier; transistor structure optimization; Foundries; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit layout; Integrated circuit technology; MMICs; Mixers; Preamplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196671

Filename

1196671