Recent advances in CMOS circuits towards 40 Gb/s and 50 GHz

Author

Simburger, Werner ; Tiebout, M. ; Kehrer, D. ; Wohlmuth, H.-D. ; Knapp, H. ; Wurzer, M. ; Rest, M.

Author_Institution

Corporate Res., Infineon Technol. AG, Munich, Germany

fYear

2003

fDate

11-11 April 2003

Firstpage

76

Lastpage

79

Abstract

Recently, CMOS has been demonstrated to be a viable technology for wireless communications and very-high-bit-rate broadband circuit design at over 10 Gb/s in highly integrated systems. This paper presents advances in circuit design which fully exploit the high-speed potential of a 0.13 /spl mu/m standard CMOS technology up to 40 Gb/s and 50 GHz. The combination of advanced circuit techniques and state-of-the-art fabrication-process technology results in continuing the upward shift of the frequency limits.

Keywords

CMOS analogue integrated circuits; CMOS digital integrated circuits; demultiplexing equipment; field effect MIMIC; frequency dividers; high-speed integrated circuits; millimetre wave frequency convertors; millimetre wave oscillators; multiplexing equipment; voltage-controlled oscillators; 0.13 micron; 40 Gbit/s; 50 GHz; CMOS technology; data multiplexer; low power VCO; static frequency divider ICs; very-high-bit-rate broadband circuit design; CMOS technology; Circuit synthesis; Coaxial cables; Costs; Energy consumption; Frequency conversion; Integrated circuit technology; Optical frequency conversion; Radio frequency; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196673

Filename

1196673