3D time-domain electromagnetic/transport macroscopic numerical physical modelling

Author

El Moussati, Ali ; Dalle, C.

Author_Institution

Lab. d´´Electron. et Telecommun. (LET), ENSA, Oujda, Morocco

fYear

2009

fDate

15-17 Nov. 2009

Firstpage

1

Lastpage

4

Abstract

A new 3D time-domain physical numerical electromagnetic/transport modeling has been used to investigate the photoswitch (PS) operation. It is mainly based on a self-consistent solution of both the Maxwell and drift-diffusion equations by means of the FDTD method. The model has been applied to a GaAs microstrip line photoswitch. Some results illustrate the model capabilities. Some circuit functional quantities are determined as a function of RF operation parameters. Some features of the PS transient operation as a function of the semiconductor material transport parameters are described.

Keywords

Maxwell equations; finite difference time-domain analysis; microstrip lines; semiconductor materials; 3D time-domain analysis; FDTD method; GaAs; Maxwell equations; PS transient operation; drift-diffusion equations; electromagnetic macroscopic numerical physical modelling; microstrip line photoswitch; semiconductor material transport parameters; transport macroscopic numerical physical modelling; Circuits; Electromagnetic modeling; Finite difference methods; Gallium arsenide; Maxwell equations; Microstrip; Numerical models; Radio frequency; Semiconductor materials; Time domain analysis; Boltzmann´s equation; Maxwell equations; component; finite difference time domain (FDTD); photoconductive switch (PS);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium (MMS), 2009 Mediterrannean

Conference_Location

Tangiers

Print_ISBN

978-1-4244-4664-3

Electronic_ISBN

978-1-4244-4665-0

Type

conf

DOI

10.1109/MMS.2009.5409792

Filename

5409792