Title :
A 2 GHz 2 mW SiGe BiCMOS frequency divider with new latch-based structure
Author :
Mazouffre, O. ; Begueret, J.-B. ; Cathelin, A. ; Belot, D. ; Deval, Y.
Author_Institution :
IXL, Talence, France
Abstract :
A low power (2 mW) 2 GHz BiCMOS divider dedicated to UNITS is presented. The divider uses a new latch-based structure to obtain a division-by-4 with only two low-speed D-latches. The modulus can be 64 or 72 by the use of phase switching between the different quadrature outputs. The core of the programmable divider fabricated in 0.25 /spl mu/m STMicroelectronics SiGe BiCMOS technology occupies 0.025 mm/sup 2/ and consumes 1.3 mA at 1.5 V. The residual phase noise at the output is less than -100 dBc/Hz at an offset of 1 kHz from the carrier.
Keywords :
3G mobile communication; BiCMOS digital integrated circuits; Ge-Si alloys; UHF integrated circuits; flip-flops; frequency dividers; frequency synthesizers; low-power electronics; phase noise; programmable circuits; semiconductor materials; 0.25 micron; 1.3 mA; 1.5 V; 2 GHz; 2 mW; BiCMOS divider; STMicroelectronics BiCMOS technology; SiGe; SiGe BiCMOS technology; UMTS synthesizers; dual-modulus divider; latch-based structure; low power divider; low-speed D-latches; phase switching; programmable divider; quadrature outputs; residual phase noise; 3G mobile communication; BiCMOS integrated circuits; Clocks; Flip-flops; Frequency conversion; Germanium silicon alloys; Latches; Phase locked loops; Propagation delay; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196675
