Title :
Highly-reliable ultra thin gate oxide formation process
Author :
Iwamoto, T. ; Morita, M. ; Ohmi, T.
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
We have demonstrated that carbon contamination on a gate oxide surface induces the degradation of the gate oxide reliability. Highly-reliable ultra thin gate oxides can be obtained by a new oxide formation process: the thermal oxidation of a silicon surface in the strongly reductive ambient and/or the removal of hydro-carbon from the gate oxide surface with O/sub 3/ gas/IR lamp cleaning.
Keywords :
MOS capacitors; oxidation; secondary ion mass spectra; semiconductor device reliability; spectrochemical analysis; surface cleaning; surface contamination; C contamination; FTIR-ATR spectra; MOS capacitors; O/sub 3/; O/sub 3/ gas/IR lamp cleaning; SIMS; Si; Si surface; SiO/sub 2/:C; ULSI device scaling; charge to breakdown; gate oxide reliability degradation; gate oxide surface; high reliability; hydrocarbon removal; strongly reductive ambient; thermal oxidation; ultra thin gate oxide formation; Chemicals; Flash memory; Furnaces; Laboratories; Lamps; Oxidation; Passivation; Reliability engineering; Surface cleaning; Surface contamination;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554089
