180 degree hybrid (rat-race) junction on CMOS grade silicon with a polyimide interface layer

Author

Ponchak, G.E. ; Papapolymerou, J.

Author_Institution

Electron Device Technol. Branch, NASA Glenn Res. Center, Cleveland, OH, USA

fYear

2003

fDate

11-11 April 2003

Firstpage

96

Lastpage

99

Abstract

180-degree hybrid junctions can be used to equally divide power between two output ports with either a 0 or 180-degree phase difference. Alternatively, they can be used to combine signals from two sources and output a sum and difference signal. The main limitation of implementing these on CMOS grade silicon is the high loss associated with the substrate. In this paper, we present a low loss 180-degree hybrid junction on CMOS grade (15 /spl Omega/-cm) silicon with a polyimide interface layer for the first time. The divider utilizes Finite Ground Coplanar (FGC) line technology, and operates at a center frequency of 15 GHz.

Keywords

CMOS integrated circuits; coplanar waveguides; polymer films; power dividers; radiofrequency integrated circuits; waveguide junctions; 15 GHz; 15 ohmcm; 180 degree hybrid rat-race junction; CMOS grade silicon RFIC; Si; finite ground coplanar line technology; polyimide interface layer; power divider; substrate loss; Coplanar waveguides; Coupling circuits; Dielectric loss measurement; Dielectric substrates; Hybrid junctions; Polyimides; Power transmission lines; Radio frequency; Radiofrequency integrated circuits; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196678

Filename

1196678