An improved driving circuit scheme applied in extreme low-current design on OLED-on-silicon microdisplay

This paper describes an improved driving circuit scheme including a slew-rate enhancement circuit for organic light-emitting-diode-on-silicon (OLEDoS) microdisplay design. Due to the basic pixel cell area of OLEDoS microdisplay being less than 300 μm², pixel currents are always needed to modulate from hundreds of pico-amperes (pA) to tens of nano-amperes (nA). The proposed circuit can satisfy the timing requirements (the time period of video sample signal is about 30ns) at such low current. Extra circuits introduced by the improved driving circuit scheme have a simple structure and consume little additional power in static condition.