DocumentCode
3419070
Title
Novel technological solution to improve both Q factor and losses of passive circuits on low resistivity silicon
Author
Grenier, K. ; Bouchriha, F. ; Dubuc, David ; Pons, P. ; Graffeuil, J. ; Plana, R.
Author_Institution
Lab. d´Autom. et d´Anal. des Syst., CNRS, Toulouse, France
fYear
2003
fDate
11-11 April 2003
Firstpage
115
Lastpage
117
Abstract
This paper deals with a novel technological solution based on the use of surface micromachining in coplanar slots that are filled with a thick organic dielectric layer. This technique enables both Q factor and losses improvements of passive circuits realized on low resistivity silicon substrate. It permits indeed to achieve much better attenuation level without an important decrease of the effective permittivity.
Keywords
Q-factor; coplanar waveguides; losses; micromachining; passive networks; permittivity; CPW line; Q-factor; Si; attenuation coefficient; coplanar slot; effective permittivity; loss; low-resistivity silicon substrate; organic dielectric layer; passive circuit; surface micromachining technology; Attenuation; Conductivity; Coplanar waveguides; Dielectric losses; Etching; Micromachining; Passive circuits; Polymers; Q factor; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196683
Filename
1196683
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