Title :
RF-Schottky diodes with Ni silicide for mixer applications
Author :
Morschbach, M. ; Schollhorn, C. ; Oehme, M. ; Kasper, E.
Author_Institution :
Inst. fur Halbleitertechnik, Stuttgart Univ., Germany
Abstract :
In this paper n- and p-doped Schottky diode with NiSi (nickel silicide) as contact material will be compared with Schottky diodes with Al (aluminum) contact. It is shown that a useable p-doped Schottky diode with high cut-off frequency could be achieved if nickel silicide is used as contact material. Also is proved that nickel silicide, if used as contact material, decreases the series resistance in cause of a reduced contact resistance.
Keywords :
Schottky diodes; contact resistance; electrical contacts; elemental semiconductors; millimetre wave diodes; millimetre wave mixers; nickel compounds; semiconductor device metallisation; semiconductor-metal boundaries; silicon; NiSi contact material; RF Schottky diode; contact resistance; high cut-off frequency; mixer applications; n-doped Schottky diode; p-doped Schottky diode; series resistance; Aluminum; Circuits; Contact resistance; Cutoff frequency; Mixers; Nickel; Radio frequency; Schottky diodes; Silicides; Silicon;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196685
