DocumentCode :
3419122
Title :
3.4-mW common-gate and current-reused UWB LNA
Author :
Lee, Ji-Young ; Park, Hyun-Kyu ; Chang, Ho-Jun ; Yun, Tae-Yeoul
Author_Institution :
Div. of Electr. & Comput. Eng., Hanyang Univ., Seoul, South Korea
fYear :
2012
fDate :
16-18 Jan. 2012
Firstpage :
33
Lastpage :
36
Abstract :
A common-gate (CG) low-noise amplifier using the current-reused technique is proposed for both ultra-wideband and low-power consumption. The CG amplifier, employed at the input stage, enables wide-band input matching with low transconductance and the frequency-independent noise figure (NF), compared to the common-source amplifier. The current-reused technique is adopted in order to reduce the power dissipation while achieving a reasonable power gain. Furthermore, the shunt and series peaking technique is adopted for a wide bandwidth. The proposed LNA obtains a 3-dB bandwidth from 2.4 to 11.2 GHz, a maximum power gain of 14.8 dB, a minimum NF of 3.9 dB, and an IIP3 of -11.5 dBm while consuming 3.4 mW from a 1.5 V supply. A 0.18-μm CMOS process is utilized for the fabrication.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; low noise amplifiers; low-power electronics; ultra wideband technology; CMOS process; MMIC amplifiers; common-gate low-noise amplifier; common-source amplifier; current-reused technique; frequency 2.4 GHz to 11.2 GHz; frequency-independent noise figure; gain 14.8 dB; low-power consumption; noise figure 3.9 dB; power 3.4 mW; series peaking; shunt peaking; size 0.18 mum; ultra-wideband LNA; voltage 1.5 V; CMOS integrated circuits; Gain; Impedance; Impedance matching; Noise measurement; Wideband; LNA; UWB; common-gate; current-reused; low power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4577-1317-0
Type :
conf
DOI :
10.1109/SiRF.2012.6160116
Filename :
6160116
Link To Document :
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