Tunable linear MOS resistor for RF applications

Author

Xiang, Xinbo ; Sturm, Johannes

Author_Institution

Sch. of Syst. Eng., Carinthia Univ. of Appl. Sci., Villach, Austria

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

37

Lastpage

40

Abstract

This paper discusses a continuously tunable linear MOS resistor with bi-directional characteristics. The proposal is based on a 2^nd order nonlinearity cancellation and is implemented by quasi-floating-gate (QFG) technique. The resistor is optimized for speed, noise and linearity, which makes it well-suited for tunable RF amplifiers. Parallel slices were introduced to enlarge the tuning range. A switching strategy is implemented to guarantee monotonic tuning with limited linearity loss. A testchip is fabricated in 65nm CMOS technology, which shows a -40dB distortion with moderate overdrive voltage and 200mV peak to peak signal amplitude and a high tuning ratio of 19. This MOS resistor has no static power consumption and a layout area of 39μm × 37μm.

Keywords

CMOS integrated circuits; circuit tuning; radiofrequency amplifiers; resistors; CMOS technology; RF applications; bi-directional characteristics; continuously tunable linear MOS resistor; monotonic tuning; parallel slices; quasifloating-gate; second order nonlinearity cancellation; size 65 nm; switching strategy; tunable RF amplifiers; Linearity; Logic gates; Noise; Resistance; Resistors; Transistors; Tuning; MOS resistor; linear resistors; monotonicity; quasi-floating-gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160119

Filename

6160119