CMOS-fieldemission devices based on {111} silicon surfaces

Author

Bachmann, Michael ; Pahlke, A. ; Axt, C. ; Hinze, B. ; Hansch, Walter

Author_Institution

Ketek GmbH, Munich, Germany

fYear

2013

fDate

8-12 July 2013

Firstpage

1

Lastpage

2

Abstract

A CMOS process for field emission devices based on {111} silicon surfaces is presented. Structure sizes below 300nm are produced with i-line lithography and sizes below 100nm with an additional epitaxial layer. Ridges with apex diameters of 40nm are formed by line shaped shadow masks with molecular beam epitaxy. The resulting structures are used as field emission devices. Electrical measurements show a distinct linear region in Fowler-Nordheim coordinates. However, immediate destruction of these devices is observed within only a few voltage sweeps. A clear lifetime improvement is obtained by reducing the distance between anode and cathode, indicating big influence of residual gas breakdown.

Keywords

X-ray fluorescence analysis; electric breakdown; epitaxial layers; field emitter arrays; molecular beam epitaxial growth; silicon; ultraviolet lithography; 111 silicon surfaces; CMOS process; Fowler-Nordheim coordinates; anode; cathode; electrical measurements; epitaxial layer; field emission devices; i-line lithography; lifetime improvement; line shaped shadow masks; linear region; molecular beam epitaxy; residual gas breakdown; size 40 nm; CMOS integrated circuits; Lead; Substrates; field emitter arrays; silicon ridges;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2013 26th International

Conference_Location

Roanoke, VA

Type

conf

DOI

10.1109/IVNC.2013.6624746

Filename

6624746