A novel micromachined planar filter on Si substrate at 45 GHz based on electromagnetic bandgap structures for wireless applications

A novel micromachined 2-pole Chebyshev filter at 45 GHz with 1.4% 0.2 dB equiripple bandwidth and 3.8 dB loss using coupled defects in a periodic electromagnetic bandgap structure (EBG) is presented in this paper. The periodic bandgap structure is realized on a 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. The filter can be accessed via coplanar waveguide feeds. We first describe the geometrical, physical, and electrical characteristics of the periodic structures and then present simulated and measured results for the filter. The filter is simulated with the Finite Element Method (FEM). The measurements agree fairly well with the simulations.