DocumentCode :
3419226
Title :
Electron beam collimation with a 40,000 tip double-gate metal field emitter array and in-situ control of nanotip sharpness distribution
Author :
Helfenstein, Patrick ; Guzenko, V.A. ; Fink, H.-W. ; Tsujino, Soichiro
Author_Institution :
Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
fYear :
2013
fDate :
8-12 July 2013
Firstpage :
1
Lastpage :
2
Abstract :
A double-gate metal field emitter array consisting of 40,000 emitter tips with large collimation gate apertures was was fabricated and its beam collimation property was tested. By applying a negative potential to the on-chip collimation gate electrode, a reduction of the beam envelope down to the array size with minimal reduction of the emission current was observed. In a further step, a noble gas conditioning process was applied to the tested device resulting in improved emission uniformity of the array.
Keywords :
electrochemical electrodes; electron beam lithography; field emitter arrays; nanoelectronics; beam collimation property; collimation gate apertures; double-gate metal field emitter array; electron beam collimation; in-situ control; nanotip sharpness distribution; negative potential; noble gas conditioning process; on-chip collimation gate electrode; Electron beams; double gate field emitter arrays; electron beam lithography; nobel gas conditioning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2013 26th International
Conference_Location :
Roanoke, VA
Type :
conf
DOI :
10.1109/IVNC.2013.6624747
Filename :
6624747
Link To Document :
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