Title :
Wafer level packaging solution for high performance microwave inductors on Si substrates
Author :
Nuttinck, S. ; Pinel, S. ; Laskar, J.
Author_Institution :
Yamacraw Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report an innovative wafer level packaging solution for high performance microwave inductors on Si substrates. We present design rules for high-Q microwave inductors. Inductors fabricated on Si substrates using this technology exhibit Q´s up to 50 in the C-band.
Keywords :
MMIC; chip scale packaging; elemental semiconductors; integrated circuit metallisation; silicon; substrates; thin film inductors; C-band; Si; Si substrates; design rules; high performance microwave inductors; high-Q microwave inductors; lossy substrate; two-metal layer process; wafer level packaging; Dielectric substrates; Inductors; Integrated circuit interconnections; Low-noise amplifiers; MMICs; Noise figure; Q factor; Radio frequency; Silicon; Wafer scale integration;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196693
