• DocumentCode
    3419271
  • Title

    16.9-mW 33.7-dB gain mmWave receiver front-end in 65 nm CMOS

  • Author

    Li, Chun-Hsing ; Kuo, Chien-Nan

  • Author_Institution
    Inst. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • fDate
    16-18 Jan. 2012
  • Firstpage
    179
  • Lastpage
    182
  • Abstract
    This work presents a low power receiver front-end design for the 77 GHz radar application. The theoretical maximum achievable gains in the LNA and the mixer are derived by using energy conservation principle. It is shown that the maximum gain can be increased by raising the impedance ratio between stages. The impedance transformation is able to provide high passive gain without any power consumption. Moreover, the quality of the passive components plays a critical role to approach the maximum gain condition. Accordingly a low power receiver front-end is designed in 65 nm CMOS. The measured results show the highest gain of 33.7 dB at 73 GHz with 3 dB bandwidth from 67 GHz to 75 GHz. The input return loss, P1dB, IIP3, and NF at IF frequency of 8 MHz, are 16.4 dB, -32 dBm, -19 dBm, and 12.2 dB, respectively. The power consumption is only 16.9 mW from a 1 V supply. To the best of our knowledge, this work shows the highest gain while consumes the lowest power as compared to the prior works.
  • Keywords
    CMOS integrated circuits; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave radar; millimetre wave receivers; CMOS; LNA; energy conservation principle; frequency 73 GHz; frequency 77 GHz; gain 33.7 dB; impedance ratio; impedance transformation; loss 16.4 dB; low power receiver front-end design; maximum gain condition; mixer; mm wave receiver front-end; noise figure 12.2 dB; passive components; power 16.9 mW; radar application; return loss; size 65 nm; voltage 1 V; CMOS integrated circuits; Frequency measurement; Gain; Mixers; Power demand; Radio frequency; Receivers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    978-1-4577-1317-0
  • Type

    conf

  • DOI
    10.1109/SiRF.2012.6160122
  • Filename
    6160122