• DocumentCode
    3419285
  • Title

    The applicability of VBIC and Agilent model on InP DHBTs

  • Author

    Jin-Can Zhang ; Yu-Ming Zhang ; Hong-Liang Lu ; Yi-Men Zhang ; Hai-Peng Zhang

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
  • fYear
    2012
  • fDate
    Oct. 29 2012-Nov. 1 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper the modeling results for a given InGaAs/InP DHBTs technology (1×15μm2 emitter area) have been shown with two advanced compact models, VBIC and Agilent model. Shortcomings of these models have been pointed out and an improved model to overcome these shortcomings has been discussed.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; Agilent model; DHBT technology; InGaAs-InP; VBIC; compact model; double heterojunction bipolar transistor; emitter area; Current measurement; Double heterojunction bipolar transistors; Educational institutions; Indium gallium arsenide; Indium phosphide; Photonic band gap; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4673-2474-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2012.6467792
  • Filename
    6467792
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3419285