Title :
Spatial distribution of microscopic noise contributions in SiGe HBTs
Author :
Yan Cui ; Guofu Niu ; Yun Shi ; Harame, D.L.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
This paper presents a new technique of simulating the spatial distribution of microscopic noise contribution to the input noise current, voltage, and their correlation. The technique is demonstrated on a 50 GHz SiGe HBT. A strong "noise crowding" effect is observed in the spatial distribution of noise concentrations due to base majority holes. The spatial distributions by base majority holes, base minority electrons, and emitter minority holes are analyzed, and compared to the compact noise model.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 50 GHz; SiGe; SiGe HBT; compact noise model; input noise current; input noise voltage; microscopic noise simulation; noise concentration; noise crowding effect; spatial distribution; Circuit noise; Circuit simulation; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Microscopy; Noise figure; Silicon germanium; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196697
