Spatial distribution of microscopic noise contributions in SiGe HBTs

Author

Yan Cui ; Guofu Niu ; Yun Shi ; Harame, D.L.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

fYear

2003

fDate

11-11 April 2003

Firstpage

170

Lastpage

173

Abstract

This paper presents a new technique of simulating the spatial distribution of microscopic noise contribution to the input noise current, voltage, and their correlation. The technique is demonstrated on a 50 GHz SiGe HBT. A strong "noise crowding" effect is observed in the spatial distribution of noise concentrations due to base majority holes. The spatial distributions by base majority holes, base minority electrons, and emitter minority holes are analyzed, and compared to the compact noise model.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 50 GHz; SiGe; SiGe HBT; compact noise model; input noise current; input noise voltage; microscopic noise simulation; noise concentration; noise crowding effect; spatial distribution; Circuit noise; Circuit simulation; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Microscopy; Noise figure; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196697

Filename

1196697