Title :
Consistent simulation of bandgap narrowing in SiGe HBTs
Author :
Yun Shi ; Guofu Niu ; Cressler, J.D.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
Abstract :
This work investigates the modeling of heavy doping induced bandgap narrowing (BGN) in highly scaled SiGe HBTs. An inconsistency between simulated results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct the problem. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency in SiGe HBTs is also addressed.
Keywords :
Ge-Si alloys; conduction bands; digital simulation; electronic engineering computing; energy gap; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; statistics; valence bands; Boltzmann statistics; DESSIS; Fermi-Dirac statistics; MEDICI; SiGe; commercial device simulators; conduction band; heavy doping induced bandgap narrowing; highly scaled SiGe HBTs; modeling; simulated cut-off frequency; valence band; Doping; Error analysis; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Photonic band gap; Semiconductor process modeling; Silicon germanium; Statistical distributions; Statistics;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196698
