Title :
A 90nm 512Kb embedded Phase-Change Memory macro with fast read access time for digital multimedia broadcasting applications
Author :
Hongwei Hong ; Chien Wang ; Ruizhe Wang ; Sam Sheng ; Zhongling Zhou ; Hwang, Chang-Sing ; Scoville, Chris ; Labrecque, Don ; Jurasek, Ryan ; Butler, Van ; Hokenmaier, Wolfgang
Author_Institution :
Being Adv. Memory Corp. Beijing, Beijing, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
This paper presents an embedded Phase-Change Memory (ePCM) macro with 10ns fast read access time. The ePCM macro achieves a fast read access time by introducing a novel pre-charge technique, differential array configuration, and fast sensing technique. The ePCM macro is realized in a 1mm2 silicon area where a 90nm CMOS technology is used.
Keywords :
CMOS memory circuits; digital multimedia broadcasting; phase change memories; CMOS technology; differential array configuration; digital multimedia broadcasting application; ePCM macro; embedded phase-change memory macro; precharge technique; read access time; sensing technique; silicon area; size 90 nm; storage capacity 512 Kbit; time 10 ns; Arrays; Decoding; Digital multimedia broadcasting; Microprocessors; Sensors; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467798
