W-band InP wideband MMIC LNA with 30 K noise temperature

Author

Weinreb, S. ; Lai, R. ; Erickson, N. ; Gaier, T. ; Wielgus, J.

Author_Institution

Dept. of Phys. & Astron., Massachusetts Univ., Amherst, MA, USA

Volume

1

fYear

1999

fDate

13-19 June 1999

Firstpage

101

Abstract

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMTs coupled with CPW circuit design. The paper describes the transistor model, as well as modeled and measured on-wafer and in-module results at both 300 K and 24 K operating temperatures for several samples of the device.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; coplanar waveguide components; cryogenic electronics; field effect MIMIC; indium compounds; integrated circuit layout; integrated circuit noise; low-power electronics; millimetre wave amplifiers; wideband amplifiers; 1.4 mW; 20 dB; 24 K; 300 K; 65 to 110 GHz; CPW circuit design; InP; InP HEMT; InP wideband MMIC LNA; MM-wave low noise amplifier; W-band; cryogenically-cooled LNA; low power consumption; transistor model; wide frequency range; Broadband amplifiers; Circuit noise; Indium phosphide; Low-noise amplifiers; MMICs; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave transistors; Temperature; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779434

Filename

779434