Title :
A general parameter extraction method for transistor noise models with correlation
Author :
Stenarson, J. ; Garcia, M. ; Angelov, I. ; Zirath, H.
Author_Institution :
Lab. of Microwave Electron., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A new general direct extraction procedure for transistor noise models including two correlated noise sources is developed. The extraction procedure is demonstrated for a Silicon Carbide (SiC) Metal Semiconductor Field Effect Transistor (MESFET). The extracted model shows good agreement to measured noise parameters.
Keywords :
Schottky gate field effect transistors; equivalent circuits; microwave field effect transistors; semiconductor device noise; silicon compounds; wide band gap semiconductors; FET model; HFET; SiC; SiC MESFET; correlated noise sources; direct extraction procedure; general parameter extraction method; transistor noise models; Circuit noise; Equivalent circuits; FETs; Integrated circuit noise; MESFETs; Microwave transistors; Noise measurement; Parameter extraction; Semiconductor device noise; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779437
