Title :
Analysis of Si and SiGe integrated optical devices
Author :
Pierantoni, L. ; Di Donato, A. ; Rozzi, T.
Author_Institution :
Dipt. di Elettronica ed Automatica, Universit degli Studi di Ancona, Italy
Abstract :
In this contribution we present the application of hybrid time-domain transmission line matrix-integral equation methods (TLM-IE) to the analysis of Si and SiGe integrated optic components. For many practical configurations, the standard methods of integrated optics, because of their validity condition, are not satisfy. Then a combined TLM-IE can be used to visualize and to understand the electromagnetic field behaviour. In this letter, the simulation results of optical devices are presented. Compared with the pure TLM method the hybrid TLM-IE requires a considerably reduced computational effort.
Keywords :
Ge-Si alloys; elemental semiconductors; integral equations; integrated optics; semiconductor materials; silicon; time-domain analysis; transmission line matrix methods; Si; SiGe; electromagnetic field; hybrid time-domain transmission line matrix-integral equation method; integrated optical device; Computational modeling; Electromagnetic fields; Equations; Germanium silicon alloys; Integrated optics; Optical devices; Silicon germanium; Time domain analysis; Transmission line matrix methods; Visualization;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location :
Grainau, Germany
Print_ISBN :
0-7803-7787-7
DOI :
10.1109/SMIC.2003.1196701
