Title :
A compact V-band 3DMMIC single-chip down-converter using photosensitive BCB dielectric film
Author :
Nishikawa, K. ; Sugitani, S. ; Inoue, K. ; Kamogawa, K. ; Tokumitsu, T. ; Toyoda, I. ; Tanaka, M.
Author_Institution :
NTT Wireless Syst. Labs., Yokosuka, Japan
Abstract :
A high-density MMIC V-band down-converter that employs the masterslice 3DMMIC technology and photosensitive BCB dielectric film, is presented. The down-converter is structured using an 8/spl times/2 master array in a 1.84 mm/spl times/0.87 mm chip. A down-converter MMIC with H-MESFET with f/sub max/ of 130 GHz demonstrates the gain of 19.3 dB and image rejection ratio of above 18 dB over the frequency range of 56.5 GHz to 59.5 GHz; its associated gain-density is five times higher than that of conventional MMICs.
Keywords :
MESFET integrated circuits; MMIC frequency convertors; dielectric thin films; field effect MIMIC; millimetre wave mixers; 130 GHz; 19.3 dB; 3DMMIC; 56.5 to 59.5 GHz; H-MESFET; V-band; gain-density; image rejection ratio; master array; photosensitive BCB dielectric film; single-chip down-converter; Coupling circuits; Dielectric films; Gain; Indium phosphide; Laboratories; MMICs; Millimeter wave radar; Millimeter wave technology; Polyimides; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779441
