Influence of electron energy distribution in nanocathodes on current-voltage characteristics

Author

Evtukh, A. ; Grygoriev, A. ; Litovchenko, V. ; Steblova, O. ; Yilmazoglu, Oktay ; Hartnagel, H. ; Mimura, Hidenori

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Kiev, Ukraine

fYear

2013

fDate

8-12 July 2013

Firstpage

1

Lastpage

2

Abstract

The peculiarities of electron field emission from silicon based multilayer cathodes have been investigated. The structure under study was Si tip coated with SiO₂-Si-SiO₂ multilayer. The coating was formed by low pressure chemical vapor deposition of silicon enriched SiO_x film (d=6.6 nm) and following thermal annealing. The electron distribution in silicon tip (3D) and quantum dot (1D) were taken into account during calculation of emission current. As it was shown the emitted electron energy distribution has two peaks. The emission current-voltage characteristic calculated based on the obtained electron energy distribution is in a good quality agreement with experimental one.

Keywords

cathodes; chemical vapour deposition; electron field emission; elemental semiconductors; multilayers; nanotechnology; rapid thermal annealing; semiconductor quantum dots; semiconductor thin films; silicon; silicon compounds; SiO₂-Si-SiO₂; electron energy distribution; electron field emission; emission current-voltage characteristic; low pressure chemical vapor deposition; nanocathodes; quantum dot; silicon based multilayer cathodes; silicon tip; thermal annealing; Anodes; Silicon; electron energy distribution; electron field emission; multilayer structure; nanocathodes; nanoclusters; silicon; silicon oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference (IVNC), 2013 26th International

Conference_Location

Roanoke, VA

Type

conf

DOI

10.1109/IVNC.2013.6624758

Filename

6624758