DocumentCode
341957
Title
12 GHz coplanar quasi-monolithic oscillator
Author
Wasige, E. ; Kompa, G. ; van Raay, F. ; Scholz, W. ; Rangelow, I.W. ; Kassing, R. ; Bertram, S. ; Hudek, P.
Author_Institution
FG Hochfrequenztech., Kassel Univ., Germany
Volume
1
fYear
1999
fDate
13-19 June 1999
Firstpage
227
Abstract
First results on coplanar quasi-monolithic (QM) circuits with GaAs FETs embedded in a silicon substrate are presented. Typical monolithic integration techniques are used for the fabrication of the passive circuitry and interconnects to the active devices. Measurements on a 12 GHz oscillator demonstrate the viability of the proposed technology.
Keywords
hybrid integrated circuits; microwave integrated circuits; microwave oscillators; 12 GHz; GaAs; GaAs FETs; Si; Si substrate; active devices; coplanar quasi-monolithic oscillator; interconnects; monolithic integration techniques; passive circuitry; quasi-monolithic circuits; FETs; Fabrication; Gallium arsenide; Integrated circuit interconnections; Integrated circuit measurements; MMICs; Microwave Theory and Techniques Society; Microwave oscillators; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.779463
Filename
779463
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